CH4/H2/Ar ECR plasma etching for AlGaAs/InGaAs/GaAs pseudomorphic HFETs
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چکیده
منابع مشابه
ECR Based Chemically Assisted Plasma Etching Of GaAs
Etching of GaAs, when plasma of Ar gas is used and CF4 /O2 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ECR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/O2/Ar ratio and substrate bias on e...
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1 COBRA Inter-University Research Institute on Communication Technology Eindhoven University of Technology –Faculty of Electrical Engineering Telecommunications Technology and Electromagnetics – Opto-Electronic Devices Group P.O.Box 513, 5600 MB Eindhoven, The Netherlands E-mail: [email protected] 2 Department of Electronic Materials Engineering, Research School of Physical Sciences and En...
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Microwave plasma was built to produce plasma in axial direction. Plasma was initiated in a Plaxy Glass made vacuum tube by 2.45GHz commercial magnetron and meanwhile system was driven by 14 Amperes DC current passing through 16cm inner diameter toroid. Measurements with a Longmuir probe and ICCD for optical spectrometry were used to characterize internal parameters like electron density, electr...
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The design and preliminary testing of a waveguide electron cyclotron resonance (ECR) heated plasma source is presented in this paper. The design utilizes resonant absorption of traveling microwaves to heat the discharge, avoiding any lifetime constraints on the device due to barium depletion or ion bombardment in more conventional devices. Results from magnetostatic calculations are presented, ...
متن کاملECR Plasma Source for Heavy Ion Beam Charge Neutralization*
Philip C. Efthimion, Erik Gilson, Larry Grisham, Pavel Kolchin and Ronald C. Davidson Plasma Physics Laboratory Princeton University, Princeton, New Jersey, 08543, USA Simon Yu and B. Grant Logan Lawrence Berkeley National Laboratory University of California, Berkeley, California, 94720, USA Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 1995
ISSN: 0013-5194,1350-911X
DOI: 10.1049/el:19950560